Sb-Te-based alloy sintered compact sputtering target

An Sb-Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb-Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the...

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Bibliographische Detailangaben
Hauptverfasser: Takahashi, Hideyuki, Koido, Yoshimasa
Format: Patent
Sprache:eng
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Zusammenfassung:An Sb-Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb-Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb-Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb-Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb-Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.