Magnetic memory device

A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A h...

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Bibliographische Detailangaben
Hauptverfasser: Sawada, Kazuya, Kitagawa, Eiji, Oikawa, Tadaaki, Eeh, Young Min, Yoshino, Kenichi, Isoda, Taiga
Format: Patent
Sprache:eng
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Zusammenfassung:A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.