Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions

Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions

Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion r...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Todorov, Stanislav S, Ito, Hiroyuki, Gossmann, Hans-Joachim L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.