Dual source injector with switchable analyzing magnet

An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion bea...

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Bibliographische Detailangaben
Hauptverfasser:	Platow, Wilhelm, Bassom, Neil
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROTHERAPY GAMMA RAY OR X-RAY MICROSCOPES HUMAN NECESSITIES HYGIENE IRRADIATION DEVICES MAGNETOTHERAPY MEDICAL OR VETERINARY SCIENCE NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS RADIATION THERAPY SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR ULTRASOUND THERAPY
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Beschreibung
Zusammenfassung:	An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.