Three-dimensional dynamic random access memory (DRAM) and methods of forming the same

Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) and corresponding methods. In an example, a film stack is formed on a substrate. The film stack includes multiple unit stacks, each having, sequentially, a first dielectric layer, a semiconductor layer, and a second dielectric layer. A first opening is formed through the film stack. The second dielectric layer is pulled back from the first opening forming a first lateral recess. A gate structure is formed in the first lateral recess and disposed on a portion of the semiconductor layer. A second opening, laterally disposed from where the first opening was formed, is formed through the film stack. The portion of the semiconductor layer is pulled back from the second opening forming a second lateral recess. A capacitor is formed in a region where the second lateral recess was disposed and contacting the portion of the semiconductor layer.