Methods related to radio-frequency filters on silicon-on-insulator substrate

Methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, a method of manufacturing a radio-frequency device can include providing a semiconductor die including a radio-frequency circuit, a first side and a second side, and a plurality of vias, each via configured to provide an electrical connection between the first side and the second side of the semiconductor die. The method can further include mounting a filter device on the first side of the semiconductor die, the filter device in communication with the radio-frequency circuit, the radio-frequency circuit implemented in a layer on the first side of the semiconductor die and at least some of the vias coupled with the radio-frequency circuit to support an electrical connection between the radio-frequency circuit and mounting features on the second side of the semiconductor die.