Semiconductor package and method of forming same

In an embodiment, a method for manufacturing a semiconductor device includes forming a redistribution structure on a carrier substrate, connecting a plurality of core substrates physically and electrically to the redistribution structure with a first anisotropic conductive film, the first anisotropi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yu, Chen-Hua, Wu, Jiun Yi, Liu, Chung-Shi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In an embodiment, a method for manufacturing a semiconductor device includes forming a redistribution structure on a carrier substrate, connecting a plurality of core substrates physically and electrically to the redistribution structure with a first anisotropic conductive film, the first anisotropic conductive film including a dielectric material and conductive particles, and pressing the plurality of core substrates and the redistribution structure together to form conductive paths between the plurality of core substrates and the redistribution structure with the conductive particles in the first anisotropic conductive film. The method also includes encapsulating the plurality of core substrates with an encapsulant. The method also includes and attaching an integrated circuit package to the redistribution structure, the redistribution structure being between the integrated circuit package and the plurality of core substrates, the integrated circuit package laterally overlapping a first core substrate and a second core substrate of the plurality of core substrates.