High I/O density flip-chip QFN

A method of making a semiconductor device includes separating a conductive structure of a leadframe into interior conductive leads using an etching process. The method includes forming a first molded structure by applying a first molding compound to a leadframe having a conductive structure, separat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lopez, Osvaldo Jorge, Luo, Tianyi, Noquil, Jonathan Almeria
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of making a semiconductor device includes separating a conductive structure of a leadframe into interior conductive leads using an etching process. The method includes forming a first molded structure by applying a first molding compound to a leadframe having a conductive structure, separating the conductive structure into at least two interior contact portions, attaching a semiconductor die to at least one of the interior contact portions, the at least two interior contact portions being supported by the first molding compound, and forming a second molded structure by applying a second molding compound to at least part of the semiconductor die and at least two interior contact portions.