Top electrode interconnect structures
The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metalliza...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature. |
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