Tunable templating layers for perpendicularly magnetized Heusler films

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent include...

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Bibliographische Detailangaben
Hauptverfasser:	Garg, Chirag, Parkin, Stuart Stephen Papworth, Jeong, Jaewoo, Ferrante, Yari, Filippou, Panagiotis Charilaos, Samant, Mahesh
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.