Composite structure and semiconductor manufacturing apparatus including composite structure

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that i...

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Bibliographische Detailangaben
Hauptverfasser:	Ashizawa, Hiroaki, Takizawa, Ryoto
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY LIME, MAGNESIA MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS REFRACTORIES SLAG SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.