Compact FINFET CMOS

A Compact FINFET System including a material which forms rectifying junctions with both N or P-type Field Induced Semiconductor, including at least two FINS electrically connected thereto and projecting substantially away therefrom parallel to one another. There further being substantially non-recti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Welch, James D
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A Compact FINFET System including a material which forms rectifying junctions with both N or P-type Field Induced Semiconductor, including at least two FINS electrically connected thereto and projecting substantially away therefrom parallel to one another. There further being substantially non-rectifying junctions to the material which forms a rectifying junction with both N or P-type Field Induced Semiconductor, and distal ends of the at least two FINS.