Methods for preparing a SOI structure

Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structu...

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Bibliographische Detailangaben
Hauptverfasser: Lottes, Charles R, Erk, Henry Frank, Thomas, Shawn George
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.