Process for producing an electrical contact on a silicon carbide substrate

Process for producing an electrical contact on a silicon carbide substrate

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Winkler, Hannes, Kramp, Stefan, Krivec, Stefan, Langer, Gregor, Kern, Ronny, Woehlert, Stefan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.