Durable hybrid heterostructures and methods for manufacturing the same
A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indi...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided. |
|---|