Bipolar transistor and method for forming the same

Bipolar transistor and method for forming the same

A bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, a passivation layer, and a collector electrode. The sub-collector layer is formed over the substrate. The collector layer is formed over the sub-collector layer. The base layer is for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chiu, Jui-Pin, Tsai, Shu-Hsiao, Yu, Chien-Rong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, a passivation layer, and a collector electrode. The sub-collector layer is formed over the substrate. The collector layer is formed over the sub-collector layer. The base layer is formed over the collector layer. The emitter layer is formed over the base layer. The passivation layer is formed over the substrate and covering a sidewall of the collector layer. The collector electrode is connected to the sub-collector layer through an opening in the passivation layer. The opening exposes at least a portion of the sub-collector layer.