Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ,...

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Bibliographische Detailangaben
Hauptverfasser:	Wang, Hui-Lin, Weng, Chen-Yi, Hou, Tai-Cheng, Li, Kun-Ju, Li, Chih-Yueh, Gao, Wei-Xin, Tsai, Bin-Siang, Tsai, Fu-Yu, Hsieh, Chin-Yang, Huang, Wei-Hao, Jhang, Jing-Yin, Lai, Yu-Tsung, Lu, Chia-Lin, Chen, Chun-Lung, Liao, Kun-Yuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.