Semiconductor device having buried logic conductor type of complementary field effect transistor, method of forming same

Semiconductor device having buried logic conductor type of complementary field effect transistor, method of forming same

A semiconductor device includes a buried communication (com) conductor (BC) CFET including: first and second active regions arranged in a stack according to CFET-type configuration; a first layer of metallization (M_1st layer) over the stack which includes first conductors configured for data or con...

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Bibliographische Detailangaben
Hauptverfasser: Wu, Guo-Huei, Chen, Chih-Liang, Tien, Li-Chun, Wang, Pochun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a buried communication (com) conductor (BC) CFET including: first and second active regions arranged in a stack according to CFET-type configuration; a first layer of metallization (M_1st layer) over the stack which includes first conductors configured for data or control signals (communication (com) conductors), and power grid (PG) conductors; and a layer of metallization (M_B layer) below the stack and which includes second com conductors.