Contact via structures of semiconductor devices

The embodiments herein relate to contact via structures of semiconductor devices and methods of forming the same. A semiconductor device is provided. The semiconductor device includes a substrate, a conductive feature over the substrate, and a contact via structure over and electrically coupling to...

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Bibliographische Detailangaben
Hauptverfasser: Chong, Yung Fu, Toh, Rui Tze, Liu, Fangyue
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The embodiments herein relate to contact via structures of semiconductor devices and methods of forming the same. A semiconductor device is provided. The semiconductor device includes a substrate, a conductive feature over the substrate, and a contact via structure over and electrically coupling to the conductive feature. The contact via structure has a concave profile.