Electronic device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n−1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n−1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n−1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.