Band-pass filter for stacked sensor

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is dispose...

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Bibliographische Detailangaben
Hauptverfasser: Huang, Cheng Yu, Chou, Keng-Yu, Tseng, Chien-Hsien, Wu, Wen-Hau, Hashimoto, Kazuaki, Chuang, Chun-Hao, Chiang, Wei-Chieh
Format: Patent
Sprache:eng
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Zusammenfassung:In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.