Monitoring device, monitoring method and method of manufacturing semiconductor device using reflectivity of wafer

Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the m...

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Bibliographische Detailangaben
Hauptverfasser:	Hong, Chang Seong, Lee, Nam Hoon, Ma, Jin Won, Lee, Jae Hee, Lee, Joo Yong, Han, Tae Hee, Cho, Nam Ki, Park, Ill Hyun, Oh, Byung Joo, Lee, Bong Ju
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MACHINE TOOLS MEASURING METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TESTING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.