Integrated circuit structures with well boundary distal to substrate midpoint and methods to form the same

The disclosure provides integrated circuit (IC) structures and methods to form the same. Methods according to the disclosure may be performed on a substrate having a first doping type, the substrate extending between a first end and a second end. A deep well is formed within the substrate, the deep...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Workman, Glenn, Shanbhag, Kaustubh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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