Integrated circuit structures with well boundary distal to substrate midpoint and methods to form the same

The disclosure provides integrated circuit (IC) structures and methods to form the same. Methods according to the disclosure may be performed on a substrate having a first doping type, the substrate extending between a first end and a second end. A deep well is formed within the substrate, the deep well including a well boundary defined between the deep well and a remainder of the substrate. The well boundary is horizontally distal to a midpoint between the first end and the second end of the substrate. A first active semiconductor region is formed at least partially over the substrate, and an oppositely-doped second active semiconductor region is formed at least partially over the deep well.