3D DRAM structure with high mobility channel

3D DRAM structure with high mobility channel

Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capa...

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Bibliographische Detailangaben
Hauptverfasser: Kitajima, Tomohiko, Kang, Sung-Kwan, Kang, Chang Seok, Natarajan, Sanjay, Lee, Gill Yong, Liu, Lequn
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described.