Command address input buffer bias current reduction
A memory device may include one or more memory banks that store data and one or more input buffers. The input buffers may receive command address signals to access the one or more memory banks. The memory device may operate in one of a first mode of operation or a second mode of operation. The one o...
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creator | Howe, Gary L |
description | A memory device may include one or more memory banks that store data and one or more input buffers. The input buffers may receive command address signals to access the one or more memory banks. The memory device may operate in one of a first mode of operation or a second mode of operation. The one or more input buffers may operate under a first bias current when the memory device is in the first mode of operation or a second bias current when the memory device is in the second mode of operation, and the first bias current may be greater than the second bias current. |
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The memory device may operate in one of a first mode of operation or a second mode of operation. The one or more input buffers may operate under a first bias current when the memory device is in the first mode of operation or a second bias current when the memory device is in the second mode of operation, and the first bias current may be greater than the second bias current.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; EARTH DRILLING ; EARTH DRILLING, e.g. DEEP DRILLING ; ELECTRIC DIGITAL DATA PROCESSING ; FIXED CONSTRUCTIONS ; GRINDING ; INFORMATION STORAGE ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; MINING ; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR ASLURRY OF MINERALS FROM WELLS ; PERFORMING OPERATIONS ; PHYSICS ; POLISHING ; STATIC STORES ; TOOLS FOR GRINDING, BUFFING, OR SHARPENING ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230905&DB=EPODOC&CC=US&NR=11748035B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230905&DB=EPODOC&CC=US&NR=11748035B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Howe, Gary L</creatorcontrib><title>Command address input buffer bias current reduction</title><description>A memory device may include one or more memory banks that store data and one or more input buffers. 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The input buffers may receive command address signals to access the one or more memory banks. The memory device may operate in one of a first mode of operation or a second mode of operation. The one or more input buffers may operate under a first bias current when the memory device is in the first mode of operation or a second bias current when the memory device is in the second mode of operation, and the first bias current may be greater than the second bias current.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING EARTH DRILLING EARTH DRILLING, e.g. DEEP DRILLING ELECTRIC DIGITAL DATA PROCESSING FIXED CONSTRUCTIONS GRINDING INFORMATION STORAGE LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MINING OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR ASLURRY OF MINERALS FROM WELLS PERFORMING OPERATIONS PHYSICS POLISHING STATIC STORES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING |
title | Command address input buffer bias current reduction |
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