Semiconductor light-emitting device and method of fabricating the same

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor la...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Juhyun, Kim, Joosung, Seo, Jonguk, Tak, Youngjo, Sakong, Tan, Lee, Donggun, Kim, Gibum
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.