Methods of re-using a silicon carbide substrate
A method includes providing a layer of porous silicon carbide supported by a silicon carbide substrate, providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide, forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide, and separating the su...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method includes providing a layer of porous silicon carbide supported by a silicon carbide substrate, providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide, forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide, and separating the substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. Additional methods are described. |
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