Magnetic memory device and method for fabricating the same

Magnetic memory device and method for fabricating the same

A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the firs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Park, Sang Hwan, Shin, Hee Ju, Oh, Se Chung, Kim, Ki Woong, Seo, Hyeon Woo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.