Wafer-level bonding of obstructive elements

A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include an obstructive element bonded to the semiconductor element along a bond interface, the obstructive element including an obstructive material dispose...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Katkar, Rajesh, DeLaCruz, Javier A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include an obstructive element bonded to the semiconductor element along a bond interface, the obstructive element including an obstructive material disposed over the active circuitry, the obstructive material configured to obstruct external access to the active circuitry. The bonded element can include an artifact structure indicative of a wafer-level bond in which the semiconductor element and the obstructive element formed part of respective wafers directly bonded prior to singulation.