Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source materi...

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Bibliographische Detailangaben
Hauptverfasser: Song, Jeonggyu, Cho, Younjoung, Kim, Haeryong, Ryu, Seungmin, Jung, Kyooho, Kim, Younsoo, Woo, Changsu, Moon, Sunmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.