Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit

Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive s...

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Bibliographische Detailangaben
Hauptverfasser: Shih, Meng-Chun, Chen, Chia-Hsiang, Wang, Ching-Huang, Chiang, Tien-Wei, Weng, Chih-Hui, Chuang, Harry-Hak-Lay, Wang, Chia Yu, Chang, Chih-Yang
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.