Self-aligned contact
The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligne...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions. |
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