Three-dimensional NAND memory device with split gates
A semiconductor device is provided. The semiconductor device includes word line layers and insulating layers that are alternatingly stacked along a vertical direction perpendicular to a substrate of the semiconductor device. The semiconductor device includes a channel structure that extends along th...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device is provided. The semiconductor device includes word line layers and insulating layers that are alternatingly stacked along a vertical direction perpendicular to a substrate of the semiconductor device. The semiconductor device includes a channel structure that extends along the vertical direction through the word line layers and the insulating layers. A cross-section of the channel structure that is perpendicular to the vertical axis includes channel layer sections that are spaced apart from one another. |
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