Silicon carbide and nitride structures on a substrate

Silicon carbide and nitride structures on a substrate

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

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Bibliographische Detailangaben
Hauptverfasser: Ladd, Thaddeus D, Whiteley, Samuel J, Yap, Daniel, Chen, Edward H, Kim, Danny M
Format: Patent
Sprache:eng
Schlagworte:
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Beschreibung
Zusammenfassung:A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.