Semiconductor memory device

A semiconductor memory device comprises: a plurality of first conductive layers arranged separated from each other in a first direction; a plurality of second conductive layers arranged, electrically insulated from the plurality of first conductive layers, at a different position in a second direction intersecting the first direction with respect to the first conductive layers; a plurality of memory structures; and a source structure. Respective one ends of the plurality of memory structures and one end of the source structure are electrically connected. The respective other ends of the plurality of memory structures are respectively electrically connected to different first wirings of a plurality of first wirings formed in the same layer in the first direction. The other end of the source structure is electrically connected to a second wiring formed in a different layer from the plurality of first wirings in the first direction.