Semiconductor devices

Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Bae, Dong Il, Noh, Chang Woo, Bae, Geum Jong, Yang, Jung Gil, Lee, Sang Hoon, Kang, Myung Gil
Format: Patent
Sprache:eng
Schlagworte:
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Zusammenfassung:Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.