TEM-based metrology method and system

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Machavariani, Vladimir, Ziselman, Igor, Kandel, Daniel, Shifrin, Michael, Sendelbach, Matthew, Kucherov, Victor, Urenski, Ronen
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.