Apparatus and method for directional etch with micron zone beam and angle control

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being opera...

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Bibliographische Detailangaben
Hauptverfasser: Lin, Pinyen, Yang, Chansyun David, Lin, Li-Te
Format: Patent
Sprache:eng
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