Radiation detector, method of operating radiation detector, and method of fabricating radiation detector

Radiation detector, method of operating radiation detector, and method of fabricating radiation detector

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhan, Xiangmi, Su, Jingjie, Zhang, Guan, Hou, Xuecheng, Ding, Zhi, Kong, Dexi, Chung, Kunjing, Xia, Huinan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.