Three-dimensionally stretchable single crystalline semiconductor membrane

A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor ma...

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Bibliographische Detailangaben
Hauptverfasser: Bedell, Stephen W, Fogel, Keith E, Reznicek, Alexander, Hekmatshoartabari, Bahman, Hashemi, Pouya, Balakrishnan, Karthik
Format: Patent
Sprache:eng
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Zusammenfassung:A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.