Low temperature plasma reaction device and hydrogen sulfide decomposition method

Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first...

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Bibliographische Detailangaben
Hauptverfasser:	Wang, Lin, Xu, Wei, Zhang, Jing, Dong, Guosheng, Zhang, Tie, Sun, Feng, Ren, Junpeng, Mu, Shanjun, Shi, Ning, Zhang, Shucai
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.