Silicon carbide semiconductor device and power converter

In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce the breakdown voltage of the terminal part. In the SiC-MOSFET with the built-in Schottky diode, a source electrode forming non-ohmic connection such as Schottk...

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Bibliographische Detailangaben
Hauptverfasser:	Hino, Shiro, Nagahisa, Yuichi, Sadamatsu, Koji, Hatta, Hideyuki
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS CONTROL OR REGULATION THEREOF CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce the breakdown voltage of the terminal part. In the SiC-MOSFET with the built-in Schottky diode, a source electrode forming non-ohmic connection such as Schottky connection with the second well region is provided on the second well region formed below a gate pad in the terminal part. By the absence of ohmic connection between the second well region and the source electrode, reduction in breakdown voltage is suppressed at the terminal part.