Thin film transistor substrate

A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

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Bibliographische Detailangaben
Hauptverfasser:	Shin, Hyune Ok, Yang, Su Kyoung, Jeong, Chang Oh, Lee, Dong Min, Yang, Chan Woo
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.