Catalyst enhanced seamless ruthenium gap fill

Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromat...

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Bibliographische Detailangaben
Hauptverfasser:	Cen, Xi, Ganguli, Seshadri, Yoon, Byunghoon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.