Capacitor and DRAM device including the same

A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrod...

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Bibliographische Detailangaben
Hauptverfasser: Choi, Jaehyoung, Park, Jungmin, Lim, Jaesoon, Cho, Cheoljin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.