Semiconductor structure
A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer....
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| creator | Lin, Shin-Cheng Lin, Chih-Hung Lin, Po-Heng |
| description | A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source structure and the drain structure are disposed on opposite sides of the barrier layer. The doped compound semiconductor layer is disposed on the barrier layer. The doped compound semiconductor layer has a first side adjacent to the source structure and a second side adjacent to the drain structure. The doped compound semiconductor layer has at least one opening exposing at least a portion of the barrier layer. The dielectric layer is disposed on the doped compound semiconductor layer and the barrier layer. The gate structure is disposed on the doped compound semiconductor layer. |
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The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source structure and the drain structure are disposed on opposite sides of the barrier layer. The doped compound semiconductor layer is disposed on the barrier layer. The doped compound semiconductor layer has a first side adjacent to the source structure and a second side adjacent to the drain structure. The doped compound semiconductor layer has at least one opening exposing at least a portion of the barrier layer. The dielectric layer is disposed on the doped compound semiconductor layer and the barrier layer. The gate structure is disposed on the doped compound semiconductor layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230613&DB=EPODOC&CC=US&NR=11677002B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230613&DB=EPODOC&CC=US&NR=11677002B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lin, Shin-Cheng</creatorcontrib><creatorcontrib>Lin, Chih-Hung</creatorcontrib><creatorcontrib>Lin, Po-Heng</creatorcontrib><title>Semiconductor structure</title><description>A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. 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The gate structure is disposed on the doped compound semiconductor layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAPTs3NTM7PSylNLskvUiguKQIySotSeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoaGZubmBgZGTkTExagAEnCKS</recordid><startdate>20230613</startdate><enddate>20230613</enddate><creator>Lin, Shin-Cheng</creator><creator>Lin, Chih-Hung</creator><creator>Lin, Po-Heng</creator><scope>EVB</scope></search><sort><creationdate>20230613</creationdate><title>Semiconductor structure</title><author>Lin, Shin-Cheng ; Lin, Chih-Hung ; Lin, Po-Heng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11677002B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lin, Shin-Cheng</creatorcontrib><creatorcontrib>Lin, Chih-Hung</creatorcontrib><creatorcontrib>Lin, Po-Heng</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lin, Shin-Cheng</au><au>Lin, Chih-Hung</au><au>Lin, Po-Heng</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor structure</title><date>2023-06-13</date><risdate>2023</risdate><abstract>A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source structure and the drain structure are disposed on opposite sides of the barrier layer. The doped compound semiconductor layer is disposed on the barrier layer. The doped compound semiconductor layer has a first side adjacent to the source structure and a second side adjacent to the drain structure. The doped compound semiconductor layer has at least one opening exposing at least a portion of the barrier layer. The dielectric layer is disposed on the doped compound semiconductor layer and the barrier layer. The gate structure is disposed on the doped compound semiconductor layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor structure |
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