Semiconductor structure

A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer....

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Bibliographische Detailangaben
Hauptverfasser:	Lin, Shin-Cheng, Lin, Chih-Hung, Lin, Po-Heng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source structure and the drain structure are disposed on opposite sides of the barrier layer. The doped compound semiconductor layer is disposed on the barrier layer. The doped compound semiconductor layer has a first side adjacent to the source structure and a second side adjacent to the drain structure. The doped compound semiconductor layer has at least one opening exposing at least a portion of the barrier layer. The dielectric layer is disposed on the doped compound semiconductor layer and the barrier layer. The gate structure is disposed on the doped compound semiconductor layer.