Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method

Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Choi, Myungsun, Shim, Seungbo, Ann, Sungjun, Kim, Kyuho, Kim, Nam Kyun, Sung, Dougyong
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Choi, Myungsun
Shim, Seungbo
Ann, Sungjun
Kim, Kyuho
Kim, Nam Kyun
Sung, Dougyong
description Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11658039B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11658039B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11658039B23</originalsourceid><addsrcrecordid>eNqNjLEKwkAQBdNYiPoPax_BGAzaKoqloNZh3dt4B7m9I7ex9tNFSCNYWE3x5s04e51bTB6BlayTB2CM2KH2KYf4vXhWG0wOKAYSe0dBTE8aOjD8dMTQ4L1zhOqCDDI4obY3n7da_h2cZqMG28SzgZNsfjxc96cFx1BzikgsrPXtUhTVerMst7tV-Y_zBmbOScs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method</title><source>esp@cenet</source><creator>Choi, Myungsun ; Shim, Seungbo ; Ann, Sungjun ; Kim, Kyuho ; Kim, Nam Kyun ; Sung, Dougyong</creator><creatorcontrib>Choi, Myungsun ; Shim, Seungbo ; Ann, Sungjun ; Kim, Kyuho ; Kim, Nam Kyun ; Sung, Dougyong</creatorcontrib><description>Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230523&amp;DB=EPODOC&amp;CC=US&amp;NR=11658039B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230523&amp;DB=EPODOC&amp;CC=US&amp;NR=11658039B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Shim, Seungbo</creatorcontrib><creatorcontrib>Ann, Sungjun</creatorcontrib><creatorcontrib>Kim, Kyuho</creatorcontrib><creatorcontrib>Kim, Nam Kyun</creatorcontrib><creatorcontrib>Sung, Dougyong</creatorcontrib><title>Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method</title><description>Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwkAQBdNYiPoPax_BGAzaKoqloNZh3dt4B7m9I7ex9tNFSCNYWE3x5s04e51bTB6BlayTB2CM2KH2KYf4vXhWG0wOKAYSe0dBTE8aOjD8dMTQ4L1zhOqCDDI4obY3n7da_h2cZqMG28SzgZNsfjxc96cFx1BzikgsrPXtUhTVerMst7tV-Y_zBmbOScs</recordid><startdate>20230523</startdate><enddate>20230523</enddate><creator>Choi, Myungsun</creator><creator>Shim, Seungbo</creator><creator>Ann, Sungjun</creator><creator>Kim, Kyuho</creator><creator>Kim, Nam Kyun</creator><creator>Sung, Dougyong</creator><scope>EVB</scope></search><sort><creationdate>20230523</creationdate><title>Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method</title><author>Choi, Myungsun ; Shim, Seungbo ; Ann, Sungjun ; Kim, Kyuho ; Kim, Nam Kyun ; Sung, Dougyong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11658039B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Shim, Seungbo</creatorcontrib><creatorcontrib>Ann, Sungjun</creatorcontrib><creatorcontrib>Kim, Kyuho</creatorcontrib><creatorcontrib>Kim, Nam Kyun</creatorcontrib><creatorcontrib>Sung, Dougyong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Choi, Myungsun</au><au>Shim, Seungbo</au><au>Ann, Sungjun</au><au>Kim, Kyuho</au><au>Kim, Nam Kyun</au><au>Sung, Dougyong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method</title><date>2023-05-23</date><risdate>2023</risdate><abstract>Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11658039B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T11%3A21%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Choi,%20Myungsun&rft.date=2023-05-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11658039B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true