Plasma etching apparatus, plasma etching method, and semiconductor device fabrication method including the plasma etching method

Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuc...

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Bibliographische Detailangaben
Hauptverfasser: Choi, Myungsun, Shim, Seungbo, Ann, Sungjun, Kim, Kyuho, Kim, Nam Kyun, Sung, Dougyong
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.